Method for producing n-type group iii nitride single crystal, n-type group iii nitride single crystal, and crystal substrate

ABSTRACT

A method of producing an n-type group III nitride single crystal includes putting raw materials that include at least a substance including a group III element, an alkali metal, and boron oxide into a reaction vessel; melting the boron oxide by heating the reaction vessel to a melting point of the boron oxide; forming a mixed melt which includes the group III element, the alkali metal, and the boron oxide, in the reaction vessel by heating the reaction vessel to a crystal growth temperature of a group III nitride; dissolving nitrogen into the mixed melt by bringing a nitrogen-containing gas into contact with the mixed melt; and growing an n-type group III nitride single crystal, which is doped with oxygen as a donor, from the group III element, the nitrogen, and oxygen in the boron oxide that are dissolved in the mixed melt.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims priority to and incorporates by referencethe entire contents of Japanese Patent Application No. 2010-194552 filedin Japan on Aug. 31, 2010 and Japanese Patent Application No.2011-151093 filed in Japan on Jul. 07, 2011.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention relates to a method for producing an n-type groupIII nitride single crystal, an n-type group III nitride single crystal,and a crystal substrate.

2. Description of the Related Art

Currently, InGaAlN-type (group III nitride) devices used as a lightsource to emit UV light, purple light, blue light, and green light aremostly produced by a production method that includes a step of growing agroup III nitride single crystal on a sapphire substrate or a siliconcarbide (SiC) substrate by MO-CVD (metal organic chemical vapordeposition), MBE (molecular beam epitaxy) or the like.

However, when a sapphire substrate or a SiC substrate is used as asubstrate, there is the problem that the crystal has many defects due tothe large difference in the thermal expansion coefficient and in thelattice constant between the substrate and the group III nitride.Consequently, this can cause a deterioration in the devicecharacteristics, such as a shortening in the life of the group IIInitride device, which is a light-emitting device. Further, this can alsocause the operating power to increase.

To resolve these problems, it is best to use the same material for thesubstrate and for the crystal to be grown on the substrate, and to growthe crystal on a group III nitride single crystal substrate such as agallium nitride (GaN) substrate, for example.

In a conventional GaN substrate production method, a thick GaN film isgrown by hydride vapor phase epitaxy (HVPE) on an underlayer substrateformed from a different material, such as a sapphire or GaAs substrate,and then the thick GaN film is separated from the underlayer substrate,whereby a GaN substrate having a diameter (φ) of about two inches isproduced.

However, in HVPE, since a GaN single crystal is heteroepitaxially grownon the under layer substrate formed from a different material, there canbe unavoidable differences in the thermal expansion coefficient orlattice mismatches between the GaN single crystal and the underlayersubstrate. Therefore, a GaN substrate produced by HVPE suffers fromhaving a high dislocation density of about 10⁶ cm⁻² and that the GaNsubstrate can become warped due to the difference in thermal expansioncoefficient with the underlayer substrate. Therefore, there is a needfor a production method that can achieve further improvements in thequality of a GaN substrate.

As a method to produce a high quality GaN substrate, research anddevelopment is being carried out into flux methods, in which a GaNsingle crystal is grown by dissolving nitrogen in a mixed melt of sodium(Na) and gallium (Ga). In a flux method, the GaN single crystal can begrown at a relatively low temperature of 700 to 900° C., and thepressure in the reaction vessel is also relatively low, at about 100kg/cm². Therefore, a flux method is a practical method for producing GaNsingle crystals.

In Chemistry of Materials, Vol. 9 (1997) 413-416, an example is reportedin which, using sodium azide (NaN₃) and Ga as raw materials, a GaNsingle crystal is grown by sealing nitrogen in a stainless steelreaction vessel and maintaining the reaction vessel at a temperature of600° C. to 800° C. for 24 to 100 hours. Further, Japanese PatentApplication Laid-open No. 2008-094704 discloses a method for producing alarge crystal of GaN by using a flux method, in which a columnar crystalof GaN is grown using a needle-like crystal of aluminum nitride (AlN) asa seed crystal. In addition, Japanese Patent Application Laid-open No.2006-045047 discloses a method for producing an AlN needle-like crystalto be used as a seed crystal. Thus, producing a large crystal of GaN bygrowing a seed crystal by using a flux method is already a well knowntechnique.

Meanwhile, when using a GaN crystal as a substrate for an opticaldevice, since it is necessary to form an n-side ohmic electrode on theGaN substrate, an n-type GaN semiconductor crystal having an n-typecarrier concentration of 10¹⁷ cm⁻³ or more is required. Therefore,growing an n-type GaN crystal by using a flux method by adding (doping)a donor such as oxygen or germanium in the GaN crystal is beinginvestigated.

However, in Japanese Patent No. 4223540 and Japanese Patent ApplicationLaid-open No. 2010-1209, there are the problems that when the dopingamount of germanium is increased, the crystal growth rate decreases andthe device characteristics deteriorate due to increased absorption ofvisible light.

Concerning the addition of oxygen, for example, Japanese PatentApplication Laid-open No. 2005-154254 discloses a technique in which,using sodium oxide (Na₂O) and oxygen gas as the dopants, about 2×10¹⁷cm⁻³ of Oxygen is doped in a group III nitride crystal. Further,Japanese Patent Application Laid-open No. 2007-246303 discloses atechnique in which about 10¹⁸ to 10²⁰ cm⁻³ of oxygen is doped byincluding oxygen and moisture in the atmospheric gas in a glove box whenpreparing the raw materials.

Concerning germanium addition, for example, Japanese Patent No. 4223540discloses a technique in which about 2×10¹⁹ cm⁻³ of germanium is addedto a group III nitride. Further, Japanese Patent Application Laid-openNo. 2010-001209 discloses a technique for producing a low-resistance GaNcrystal having an electron concentration of about 5×10¹⁹ cm⁻³ bysimultaneously adding carbon and germanium to dope 2×10¹⁷ cm⁻³ or moreto 1×10²⁰ cm⁻³ or less of germanium.

However, Japanese Patent Application Laid-open No. 2005-154254 suffersfrom the problem that a crystal having a sufficiently large carrierconcentration cannot be obtained, which makes it difficult to form alow-resistance ohmic electrode. Further, in Japanese Patent ApplicationLaid-open No. 2007-246303, there is the problem that the productionprocesses are complex, such as need to enclose oxygen and moisture inthe reaction vessel in the glove box and seal the vessel. Moreover, eventhough the oxygen and moisture may only temporarily cause the atmospherein the glove box to deteriorate, there is the problem that the life ofthe catalyst which removes the oxygen and the moisture is shortened,which makes it expensive to mass produce the crystal.

Thus, the conventional art suffers from the problem that it is difficultto produce a crystal having a large carrier concentration by efficientlydoping oxygen into the crystal because the oxygen is doped using a gasor an oxide that has a higher melting point than the crystal growingtemperature. Further, there is also the problem that to obtain a crystalhaving a large carrier concentration, the apparatus and the productionsteps become complex.

SUMMARY OF THE INVENTION

It is an object of the present invention to at least partially solve theproblems in the conventional technology.

According to an aspect of the present invention, there is provided amethod of producing an n-type group III nitride single crystal includesputting at least a substance including a group III element, an alkalimetal, and boron oxide into a reaction vessel; melting the boron oxideby heating the reaction vessel to a melting point of the boron oxide;forming a mixed melt which includes the group III element, the alkalimetal, and the boron oxide, in the reaction vessel by heating thereaction vessel to a crystal growth temperature of a group III nitride;dissolving nitrogen into the mixed melt by bringing anitrogen-containing gas into contact with the mixed melt; and growing ann-type group III nitride single crystal, which is doped with oxygen as adonor, from the group III element, the nitrogen, and oxygen in the boronoxide that are dissolved in the mixed melt.

According to another aspect of the present invention, there is providedan n-type group III nitride single crystal that is produced by themethod described above.

According to still another aspect of the present invention, there isprovided a crystal substrate of an n-type group III nitride that isproduced by processing the n-type group III nitride single crystaldescribed above.

The above and other objects, features, advantages and technical andindustrial significance of this invention will be better understood byreading the following detailed description of presently preferredembodiments of the invention, when considered in connection with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram showing a configuration example of acrystal production apparatus for producing an n-type group III nitridesingle crystal according to the present embodiment;

FIG. 2 is a pattern diagram illustrating the c-axis and the c-plane of agroup III nitride single crystal;

FIG. 3 is a pattern diagram illustrating the c-plane;

FIG. 4 is a process diagram showing the production steps for producing acrystal substrate according to the present embodiment;

FIG. 5 is a schematic diagram showing the configuration of a crystalproduction apparatus according to Example 3; and

FIG. 6 is a graph showing a relationship between the added amount ofboron oxide and the concentrations of oxygen and boron in a GaN singlecrystal.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The method for producing an n-type group III nitride single crystal, then-type group III nitride single crystal, and the crystal substrateaccording to the present embodiment will now be described in detail withreference to the accompanying drawings. However, in the followingdescriptions, the shape, size, and arrangement of the constituentelements are schematically illustrated in the drawings so as to enablethe invention to be easily understood. These features do not limit thepresent invention. Further, identical constituent elements shown inmultiple drawings are denoted with the same respective referencenumerals, and repetitive descriptions thereof may be omitted.

Crystal Production Apparatus

FIG. 1 is a schematic diagram showing a configuration example of acrystal production apparatus 1 for producing an n-type group III nitridesingle crystal according to the present embodiment.

As illustrated in FIG. 1, the crystal production apparatus 1 includes apressure-resistant vessel 11 made from stainless steel, for example,that can form an enclosed space. The pressure-resistant vessel 11 can beremoved from the crystal production apparatus 1 at a valve 21 portion.Further, a reaction vessel 12 is arranged on a platform 26 in thepressure-resistant vessel 11. The reaction vessel 12 can be detachedfrom and attached to the platform 26.

The reaction vessel 12 is for growing a group III nitride needle-likecrystal 25, which is a seed crystal, by holding the needle-like crystal25 and a mixed melt 24 that includes raw materials and additives. Asthis reaction vessel 12, for example, a crucible may be used. Thematerial of the reaction vessel 12 is not especially limited. Examplesof materials that can be used include nitrides such as a BN sinteredbody and pyrolytic-BN (P-BN), oxides such as alumina, sapphire, andyttrium-aluminum-garnet (YAG), and carbides such as SiC. As a preferredembodiment, it is preferred to use a crucible made from a BN sinteredbody.

Further, as shown in FIG. 1, a heater 13 is arranged near the peripheryof the pressure-resistant vessel 11. This heater 13 can be used toadjust the temperature of the mixed melt 24 by heating thepressure-resistant vessel 11 and the reaction vessel 12. As the heater13, an arbitrary heater may be used as long as it can heat thepressure-resistant vessel 11. For example, a double-sided heating typemuffle furnace can be used.

In addition, in the pressure-resistant vessel 11, a gas supply line 14for supplying nitrogen (N₂) gas, which is the raw material for the groupIII nitride crystal, and dilution gas is connected to an interior space23 of the pressure-resistant vessel 11. The gas supply line 14 is splitinto a nitrogen supply line 17 and a dilution gas supply line 20. Thesesupply lines can be disconnected from valves 15 and 18, respectively.

Nitrogen gas is supplied from the nitrogen supply line 17, which isconnected to a nitrogen gas cylinder or the like. After adjusting thepressure with a pressure control apparatus 16, the nitrogen gas issupplied to the gas supply line 14 via the valve 15. On the other hand,the dilution gas (for example, argon gas) is supplied from the dilutiongas supply line 20, which is connected to a dilution gas cylinder or thelike. After adjusting the pressure with a pressure control apparatus 19,the dilution gas is supplied to the gas supply line 14 via the valve 18.Thus, the pressure-adjusted nitrogen gas and dilution gas are eachsupplied to the gas supply line 14 and mixed.

Then, the mixed gas of nitrogen and the dilution gas is supplied fromthe gas supply line 14 into the pressure-resistant vessel 11 via thevalve 21. Further, a pressure gauge 22 is provided in the gas supplyline 14. This pressure gauge 22 allows the pressure in thepressure-resistant vessel 11 to be adjusted while monitoring the totalpressure in the pressure-resistant vessel 11.

In this embodiment, the nitrogen partial pressure can be adjusted byadjusting the pressure of the nitrogen gas and the dilution gas with thevalves 15 and 18 and the pressure control apparatuses 16 and 19.Further, since the total pressure in the pressure-resistant vessel 11can be adjusted, evaporation of the alkali metal (for example, sodium)in the reaction vessel 12 can be suppressed by increasing the totalpressure in the pressure-resistant vessel 11.

Although it is preferred to use argon (Ar) gas as the dilution gas, someother inert gas may also be used.

Crystal Production Method

(1) Raw Material Preparation

In the method for producing the n-type group III nitride single crystalaccording to this embodiment, a single crystal ingot is produced using aneedle-like crystal of a group III nitride as a seed crystal by furthergrowing the needle-like crystal by using a flux method so that thesingle crystal ingot is used for producing a nitride crystal substrate.

The operation for putting the raw materials and additives into thereaction vessel 12 is carried out by disconnecting thepressure-resistant vessel 11 from the valve 21, and placing thedisconnected pressure-resistant vessel 11 in a glove box filled with aninert gas such as argon gas.

As the constituent materials of the mixed melt 24, at least a substanceincluding a group III element (for example, gallium), an alkali metal toact as a flux (for example, sodium), and boron oxide (for example, borontrioxide (B₂O₃) are put into the reaction vessel 12 (material puttingstep).

The melting point of the boron oxide is lower than crystal growthtemperature of the group III nitride (for example, the crystal growthtemperature of gallium nitride is about 700 to 900° C.). As an example,the melting point of boron trioxide (B₂O₃) is 480° C. Therefore, theboron oxide melts at the crystal growth temperature, so that oxygen andboron are added to the mixed melt 24 formed in the reaction vessel 12.Consequently, when growing the group III nitride single crystal by usinga flux method, oxygen acting as an n-type dopant and boron form a solidsolution in the group III nitride single crystal, enabling an n-typegroup III nitride single crystal 27 to grow.

In this embodiment, since boron oxide that is a liquid at the crystalgrowth temperature is used as the oxygen dopant raw material substance,the oxygen can be more easily dissolved in the mixed melt 24 than when agas (for example, oxygen gas) or a high melting point oxide (forexample, sodium oxide (Na₂O)) is used as the oxygen dopant raw materialsubstance. Consequently, the oxygen can be efficiently doped in thecrystal, so that the oxygen concentration in the crystal can beefficiently increased. Therefore, there is the advantageous effect thatthe n-type group III nitride single crystal 27 can be produced that hasa high carrier concentration and a low resistance.

Further, in this embodiment, since boron oxide, which is a compound ofboron of the group III element, is used as an additive raw material,carrier doping can be carried out without reducing the n-type carrierconcentration.

Specifically, when elements having different valencies form a solidsolution in the crystal, since the charge balance (charge neutrality) inthe crystal breaks down, the valence electrons of oxygen (oxide ions)are used up in order to maintain the charge balance. More specifically,the carrier concentration decreases because the oxygen valence electronsare used up, so that the resistance of the n-type group III nitridesingle crystal increases.

In contrast, in this embodiment, the boron to be added belongs to thesame group as the raw material group III element (for example, gallium),and thus has the same valence. Therefore, when the boron is in solidsolution in the group III nitride crystal, the charge balance does notbreak down. Thus, the oxygen valence electrons are not used up tomaintain the charge balance, and the carrier concentration in thecrystal can be maintained at a high level. Accordingly, in thisembodiment, an n-type group III nitride single crystal can be producedthat has a high carrier concentration arid a low resistance.

As a preferred embodiment, it is preferred that the boron oxide (B₂O₃)content be 0.001 mol % or more based on the group III element content.As a more preferred embodiment, it is preferred that the boron oxide(B₂O₃) content be 0.01 mol % or more and less than 0.22 mol % based onthe group III element content. As an even more preferred embodiment, itis preferred that the boron oxide (B₂O₃) content be about 0.01 to 0.1mol % based on the group III element content (refer to the Examples).

According to the above preferred embodiments, the concentration of then-type dopant oxygen in the crystal of the n-type group III nitridesingle crystal 27 can be set at about 10¹⁷ cm⁻³ to 10²⁰ cm⁻³, so that ann-type group III nitride single crystal 27 can be produced that has ahigh carrier concentration of 10¹⁷ cm⁻³ or more and a low resistance.

As the raw material substance including a group III element, gallium(Ga) of the group III element may be used for example. Alternatively,other group III elements such as aluminum and indium, or a mixturethereof may be used.

Examples of the alkali metal used as a flux include, in addition tosodium (Na) or a sodium compound (for example, sodium azide), otheralkali metals such as lithium and potassium, and compounds of suchalkali metals. Multiple types of alkali metals may also be used.

The molar ratio of the substance including the group III element and thealkali metal is not especially limited. However, it is preferred thatthe molar ratio of the alkali metal based on the total number of molesof the group III element and the alkali metal be 40 to 95% . As a morepreferred embodiment, the molar ratio of the group III element (forexample, Ga) and the alkali metal (for example, Na) is preferably0.4:0.6.

As a preferred embodiment, it is preferred to set the molar ratio of thegroup III element and the alkali metal to 0.4:0.6, and boron oxide(B₂O₃) to 0.04 mol % to 0.1 mol % based on the group III element (referto the Examples) .

The needle-like crystal 25 of the group III nitride is placed in thereaction vessel 12 as a seed crystal. As a preferred embodiment, it ispreferred to use a needle-like crystal of gallium nitride obtained byusing a flux method as the seed crystal. Since the needle-like crystal25 that is produced by using a flux method has a low dislocation densityand is of a high quality, when the n-type group III nitride singlecrystal 27 is grown using this seed crystal, dislocation propagationfrom the seed crystal is low, which allows a high quality crystal to begrown. Concerning the production method of the needle-like crystal byusing a flux method, a similar method to those used in the conventionart may be used.

FIG. 2 is a schematic diagram showing a needle-like crystal 25 of agroup III nitride used as a seed crystal in this embodiment. In thisembodiment, an n-type group III nitride single crystal 27 is grown usinga needle-like crystal 25 of a group III nitride, which is long in thec-axis direction an shown in FIG. 2, as a seed crystal. In thisembodiment, the needle-like crystal 25 of a group III nitride and then-type group III nitride single crystal 27 have a hexagonal crystalstructure. The c-plane has the same definition as the (0001) plane, andthe m-plane (see FIG. 3) has the same definition as the (10-10) plane.

FIG. 3 is a cross sectional view of the c-plane orthogonal to the c-axisshown in FIG. 2. As shown in FIG. 3, the maximum diameter of the c-planeis referred to as the “crystal diameter d”. More specifically, thecrystal diameter d is the length of the longest diagonal in the hexagonforming the c-plane. In this embodiment, using the needle-like crystal25 of a group III nitride, the crystal diameter d is increased bygrowing the needle-like crystal 25 in the radial direction orthogonal tothe c-axis, whereby the area of the c-plane is increased in size.

In this embodiment, the n-type group III nitride single crystal 27 isproduced by using a flux method, which is the same method as that usedto produce the needle-like crystal 25. Therefore, compared with whenusing a different method than that used to produce the needle-likecrystal 25, there is an improvement in the consistency of the latticeconstant and the thermal expansion coefficient between the needle-likecrystal 25 and the n-type group III nitride single crystal 27. Further,dislocations that occur when the n-type group III nitride single crystal27 is grown from the needle-like crystal 25 can be suppressed.

After the raw materials and the like have been thus added, the reactionvessel 12 is placed in the pressure-resistant vessel 11. To carry outthe operation for preparing the raw materials in a glove box having aninert gas atmosphere, the pressure-resistant vessel 11 is filled withthe inert gas. By operating the valve 21, the pressure-resistant vessel11 is connected to the crystal production apparatus 1.

(2) Growing the group III Nitride Single Crystal

After the raw materials and the like have thus been set in thepressure-resistant vessel 11, the heater 13 is turned on to heat thepressure-resistant vessel 11 and the reaction vessel 12 thereinside.Since the melting point of the boron oxide is lower than the crystalgrowth temperature in this embodiment, during the process of heating thereaction vessel 12 to the crystal growth temperature, the temperature inthe reaction vessel 12 reaches the melting point of the boron oxide, andconsequently, the boron oxide melts and turns into a liquid (meltingstep).

Further, by heating the reaction vessel 12 to the crystal growthtemperature, the substance including a group III element, the alkalimetal, and the oxide that were put into the reaction vessel 12 dissolve.Consequently, the mixed melt 24 including the group III element, thealkali metal, and the boron oxide is formed in the reaction vessel 12(mixed melt forming step).

The temperature of the mixed melt 24 during the mixed melt forming stepis not especially limited. However, as a preferred embodiment, it ispreferred to set the temperature to at least 700° C. or more. As a morepreferred embodiment, it is preferred to set the temperature to about860° C. to 900° C. (refer to the Examples).

Further, the nitrogen gas and the dilution gas are adjusted to desiredgas partial pressures by regulating the valves 15 and 18 and thepressure control apparatuses 16 and 19. Then, the valve 21 is opened andthe mixed gas is introduced into the pressure-resistant vessel 11.Consequently, the nitrogen in the gas that is brought into contact withthe mixed melt 24 in the pressure-resistant vessel 11 dissolves in themixed melt 24 (nitrogen dissolving step). Although the nitrogen partialpressure in the gas is not especially limited, it is preferred to set itto at least 0.1 MPa or more. As a more preferred embodiment, it ispreferred to set the nitrogen partial pressure to about 6 MPa, and thetotal pressure of the interior space 23 in the pressure-resistant vessel11. to about 8 MPa (refer to the Examples).

As a more preferred embodiment, regarding the raw materials, it ispreferred to set the molar ratio of the group III element and the alkalimetal to 0.4:0.6 and the boron oxide (B₂O₃) to 0.04 mol % to 0.1 mol %based on the group III element, and regarding the crystal growthatmosphere, it is preferred to set the crystal growth temperature of themixed melt 24 to about 900° C., the nitrogen partial pressure to about 6MPa, and the total pressure of the interior space 23 in thepressure-resistant vessel 11 to about 8 MPa (refer to the Examples).

By setting the above crystal growth conditions, an n-type group IIInitride single crystal 27, in which the group III element, nitrogen,oxygen, and boron dissolved in the mixed melt 24 form a solid solution,grows from the needle-like crystal 25 acting as a seed crystal (crystalgrowing step).

More specifically, the boron oxide decomposes in the mixed melt 24 ornear the crystal growth face (surface) of the n-type group III nitridesingle crystal 27 into oxide ions and boron ions. Consequently, oxygenand boron are in solid solution (are doped) in the crystal. Further,since oxygen (oxide ions) having a negative change of 2 is doped in thecrystal, the grown group III nitride is an n-type semiconductor crystal.

In the above description, although the n-type group III nitride singlecrystal 27 was grown using a non-doped group III nitride needle-likecrystal 25 as a seed crystal, the crystal production method is notlimited to this. As another example, the n-type group III nitride singlecrystal may be produced using formation of crystal nucleus from themixed melt 24 without placing a seed crystal in the reaction vessel 12,and then further growing the crystal nucleus. In addition, the n-typegroup III nitride single crystal, in which the entire crystal is ann-type semiconductor, may also be produced by carrying out the samecrystal growth step as above using the crystal nucleus as a seedcrystal.

As described above, according to this embodiment, oxygen can be easilydoped in a crystal by putting boron oxide that has a lower melting pointthan the crystal growth temperature of a group III nitride (for example,gallium nitride) into the reaction vessel 12. Therefore, based on asimple process, oxygen can be efficiently doped in the crystal, so thatthere is the advantageous effect that an n-type group III nitride singlecrystal can be produced that has a high carrier concentration and a lowresistance.

Crystal Substrate Production Steps

A crystal substrate of the n-type group III nitride according to thisembodiment can be produced by shaping and processing the thus-obtainedn-type group III nitride single crystal 27. FIG. 4 is a process diagramillustrating the production steps of crystal substrates 28 m and 28 c(hereinafter, unless otherwise noted, referred to as “crystal substrate28”) according to this embodiment.

As shown in FIG. 4, if the n-type group III nitride single crystal 27 issliced in a direction perpendicular to the radial direction of thecrystal, specifically, a direction perpendicular to the c-plane, and theslice is shaped and then its surface is polished, a crystal substrate 28m with a large surface area and having a nonpolar m-plane ((10-10)plane) as a main plane is obtained.

Moreover, if the n-type group III nitride single crystal 27 is sliced ina direction parallel to the radial direction of the crystal,specifically, parallel to the c-plane, and the slice is shaped and thenits surface is polished, a crystal substrate 28 c with a large surfacearea and having a polar c-plane ((0001) plane) as a main plane isobtained.

Thus, based on the production steps according to this embodiment, thepractical crystal substrate 28 (28 m and 28 c) with a large surface areacan be produced that is capable of being used in an optical device orother semiconductor devices. Further, the crystal substrate 28 can beproduced for either the m- or c-plane.

In addition, if the n-type group III nitride single crystal is grown inthe manner described above using a cut crystal substrate 28 m or 28 c asa seed crystal, a single crystal wafer having a high quality and a largesurface area can be mass produced for both m- and c-planes.

Still further, since the n-type group III nitride single crystal 27produced by the above-described crystal production method has a lowdislocation density and a low resistance, the crystal substrate 28obtained by processing this n-type group III nitride single crystal 27also has a low dislocation density and a low resistance. Therefore,according to this embodiment, based on a simple process, a crystalsubstrate 28 of an n-type group III nitride that has a high quality anda low resistance can be produced. In addition, an ohmic electrode thathas a high quality and a low resistance can be formed using this crystalsubstrate 28.

EXAMPLES

The present invention will now be described in more detail based on thefollowing examples. However, the present invention is not limited to thefollowing examples.

Example 1

In this example, using the GaN needle-like crystal 25 as a seed crystal,the n-type GaN single crystal 27 doped with oxygen was grown. Thesereference numerals correspond to the structures in the crystalproduction apparatus 1 described with reference to FIG. 1.

First, the pressure-resistant vessel 11 was separated from the crystalproduction apparatus 1 at the valve 21 portion, and thepressure-resistant vessel 11 was placed in a glove box having an Aratmosphere.

Then, gallium (Ga), sodium (Na), and boron oxide (B₂O₃) were put intothe reaction vessel 12 formed from a BN sintered body and having aninner diameter of 55 mm. In this example, the gallium-sodium molar ratiowas. 0.4:0.6. The added amount of the boron oxide (B₂O₃) was 0.1 mol %based on the amount of gallium.

Further, a seed crystal was placed in the reaction vessel 12. Theneedle-like crystal 25, which was long in the c-axis direction and had ahexagonal columnar needle shape with (10-10) plane (m-plane) side faces,was used as this seed crystal. The c-axis length of the needle-likecrystal 25 (the height of the needle-like crystal 25) was 20 mm. Thediameter of the cross-section perpendicular to the c-axis was 500 μm.

Next, the pressure-resistant vessel 11 was hermetically sealed, thevalve 21 was closed, and the interior of the reaction vessel 12 wasblocked off from the external atmosphere. Since this series ofoperations is carried out in a glove box having a nigh-purity Aratmosphere, the interior of the pressure-resistant vessel 11 is filledwith Ar gas. Then, the pressure-resistant vessel 11 was removed from theglove box, and attached to the crystal production apparatus 1. Morespecifically, the pressure-resistant vessel 11 was arranged at apredetermined position in a heating zone of the hearer 13, and connectedto the nitrogen and argon gas supply line 14 at the valve 21 portion.

Next, the valves 21 and 18 were opened, Ar gas was fed in from thedilution gas supply line 20, the pressure was adjusted using thepressure control apparatus 19 so that the total pressure in thepressure-resistant vessel 11 was 0.75 MPa, and then the valve 18 wasclosed. Further, nitrogen gas was fed in from the nitrogen supply line17, the pressure was adjusted using the pressure control apparatus 16,and then the valve 15 was opened so that the total pressure in thepressure-resistant vessel 11 was 3 MPa. More specifically, the partialpressure of nitrogen in the interior space 23 of the pressure-resistantvessel 11 was 2.25 MPa. Subsequently, the valve 15 was closed, and thepressure control apparatus 16 was set at 8 MPa.

Next, the heater 13 was turned on to increase the temperature in thereaction vessel 12 to 900° C., which is the crystal growth temperature.At the crystal growth temperature, the gallium and sodium in thereaction vessel 12 melt and form a mixed melt 24. The temperature ofthis mixed melt 24 is the same temperature as the reaction vessel 12.Further, when the temperature increases to 900° C., in the crystalproduction apparatus 1 according to this example, the gas pressure inthe interior space 23 of the pressure-resistant vessel 11 increases dueto the increase in temperature. Therefore, the total pressure becomes 8MPa. More specifically, the nitrogen partial pressure becomes 6 MPa.

Next, the nitrogen partial pressure was adjusted to 8MPa by opening thevalve 15. This was done in order to maintain the nitrogen partialpressure in the pressure-resistant vessel 11 at 6 MPa by externallysupplying nitrogen even when the nitrogen is consumed by the growth ofgallium nitride crystals. While maintaining this state for 1,000 hours,nitrogen was continuously dissolved in the mixed melt 24 to grow then-type GaN single crystal 27.

After 1,000 hours, the temperature of the reaction vessel 12 was loweredto room temperature. Then, the gas pressure in the pressure-resistantvessel 11 was reduced. When the pressure-resistant vessel 11 was opened,an n-type GaN single crystal 27 had grown using the GaN needle-likecrystal 25 as a seed crystal, in tire reaction vessel 12.

The obtained n-type GaN single crystal 27 was colorless and transparent,and had an outer diameter of 20mm, and a c-axis length (height of then-type GaN single crystal 27) of 47 mm. The top portion of the n-typeGaN single crystal 27 was a hexagonal spindle shape formed from a(10-11) plane. The bottom portion of the crystal was a hexagonalcolumnar shape whose sides were formed from m-planes ((10-10) planes).

Next, a plate-like crystal having an in-plane ((10-10) plane) as a mainplane and a plate-like crystal having a c-plane ((0001) plane) as a mainplane were cut from the hexagonal columnar portion of the n-type GaNsingle crystal 27 and shaped. Then, the surfaces of these crystals werepolished to produce GaN crystal substrates 28 m and 28 c.

Consequently, 10 of the crystal substrates 28 m having an m-plane as amain plane and 5 of the crystal substrates 28 c having a c-plane as amain plane were produced. The crystal substrates 28 m were 10 mm long,20 mm wide, and 0.4 mm thick, and the crystal substrates 28 c had anouter diameter φ of 16 mm and a thickness of 0.4 mm.

The crystal substrates 28 c were etched with an acidic solution. Whenobserved, the density of the etched pits was 10³ cm⁻² or less, showingthat the substrates had a low dislocation density and were of a highquality.

In addition, when the crystal substrates 28 were subjected to elementalanalysis by SIMS (secondary ionization mass spectrometry), oxygen (O)and boron (B) were detected. The oxygen concentration in the crystalsubstrates 28 was 3×10¹⁹ cm⁻³ to 1×10²⁰ cm⁻³, with a mean of 8×10¹⁹cm⁻³. The boron concentration was 3×10¹⁷ cm⁻³ to 3×10¹⁸ cm⁻³, with amean of 1×10¹⁸ cm⁻³.

Further, when the electrical conductivity of the crystal substrates 28was measured, n-type electrical conductivity was exhibited, showing thatthe substrates had a low resistance.

Example 2

In this example, an n-type GaN single crystal was grown under the sameexperiment conditions as Example 1, except that the added amount of theboron oxide (B₂O₃) was 0.04 mol % based on the amount of gallium.

The obtained GaN single crystal was processed in the same manner as inExample 1 to produce GaN crystal substrates. Observation of the GaNcrystal substrates showed that the substrates had a high quality, withan etched pit density of 10³ cm⁻² or lower and a low dislocationdensity. Further, the results of SIMS analysis showed that the meanoxygen concentration in the GaN crystal substrate was 2×10¹⁹ cm⁻³ andthat the mean boron concentration was 1×10¹⁸ cm⁻³. In addition, based onthe results of measuring the electrical conductivity of the GaN crystalsubstrate, n-type electrical conductivity was exhibited, and theresistance was low.

Example 3

FIG. 5 is a schematic diagram illustrating a configuration of a crystalproduction apparatus 2 according to Example 3. In this example, fivereaction vessels 12 (12 a to 12 e) having an inner diameter of 17 mmwere arranged in the pressure-resistant vessel 11. GaN needle-likecrystals 25 (25 a to 25 e) were placed in these reaction vessels 12 a to12 e, respectively, and then the needle-like crystals 25 a to 25 e weregrown.

Although FIG. 5 only illustrates the two reaction vessels 12 a and 12 b,in actual fact the reaction vessels 12 c to 12 e were also arranged inthe pressure-resistant vessel 11. Further, as the needle-like crystals28 a to 25 e, GaN single crystals having the same crystal properties andsize as the needle-like crystal 25 used in Example 1 were used.

In this example, the crystals were grown using different amounts ofboron oxide (B₂O₃) put into the respective reaction vessels 12 a to 12e. More specifically, no boron oxide was put into one of the reactionvessels 12, while the amounts of boron oxide (B₂O₃) put into therespective remaining four reaction vessels 12 were, based on gallium,0.01 mol %, 0.04 mol %, 0.10 mol %, and 0.22 mol %, respectively.

Further, the GaN single crystals 27 (27 a to 27 e) were respectivelygrown in the reaction vessels 12 a to 12 e under the same experimentconditions as Example 1 while maintaining the reaction vessels 12 a to12 e at the crystal growing temperature of 900° C. for 80 hours.

The obtained GaN single crystals 27 a to 27 e each had the same shape asthat in Example 1, in which the top portion of the crystal was ahexagonal spindle shape formed from the (10-11) plane and the bottomportion of the crystal was a hexagonal columnar shape whose sides wereformed from the m-plane ((10-10) plane).

Further, a GaN crystal having a thickness of about several hundred μmhad grown on each surface of the seed crystals; 25 a to 25 e. Thegreater the added amount of boron oxide (B₂O₃), the greater thethickness of the GaN crystal that grew on the seed crystal 25.

The GaN single crystals 27 grown by adding 0.01 mol %, 0.04 mol %, and0.10 mol % of boron oxide (B₂O₃) and the GaN single crystal 27 grownwithout adding boron oxide (B₂O₃) were all transparent. In contrast, theGaN single crystal 27 grown by adding 0.22 mol % of boron oxide (B₂O₃)was colored black.

The oxygen and boron concentrations in the GaN single crystals 27 a to27 e were measured by SIMS. The m-planes ((10-10)), which are the sidefaces of the GaN single crystals 27 a to 27 e, were analyzed as thetarget face. In some cases the concentrations were measured a pluralityof times in the same GaN single crystal 27 while changing the targetlocation.

FIG. 6 is a graph showing the relationship between the added amount ofboron oxide (B₂O₃) and the concentrations of oxygen (O) and boron (B) inthe GaN single crystals 27 a to 27 e. In the graph, the horizontal axisrepresents the added amount of boron oxide (B₂O₃) as a function of themolar fraction of boron oxide (B₂O₃) based on gallium.

(1) Crystal Oxygen Concentration

As shown in FIG. 6, the oxygen concentration in the GaN single crystal27 that was grown without adding boron oxide (B₂O₃) was 8×10¹⁶ cm⁻³,which was the background value of oxygen during the measurement.Further, when 0.01 mol % of boron oxide (B₂O₃) was added, the oxygenconcentration in the GaN single crystal 27 was about 10¹⁷ cm⁻³. When0.22 mol % of boron oxide (B₂O₃) was added, the oxygen concentration inthe GaN single crystal 27 was about 4×10²⁰ cm⁻³. Therefore, it can beseen that about 10¹⁷ cm ⁻³ to 4×10²⁰ cm⁻³ of oxygen can be doped in theGaN single crystal 27 by adding 0.01 mol % to 0.22 mol % of bofon oxide(B₂O₃) to grow the crystal.

Further, as shown in FIG. 6, it can be seen that when the added amountof the boron oxide (B₂O₃) is less than 0.01 mol %, oxygen can be dopedin the GaN single crystal 27 to a level less than about 10¹⁷ cm⁻³. Inaddition, based on the relationship shown in FIG. 6 between the addedamount of boron oxide (B₂O₃) and the oxygen concentration in the GaNsingle crystal 27, and the oxygen background value, for example, it canbe estimated that when about 0.001 mol % of boron oxide (B₂O₃) is added,which is one order less than 0.01 mol %, about 10¹⁶ cm⁻³ of oxygen canbe doped in the GaN single crystal 27.

(2) Crystal Boron Concentration

As shown in FIG. 6, when 0.01 mol % of boron oxide (B₂O₃) was added, theboron concentration in the GaN single crystal 27 was about 10¹⁷ cm⁻³.When 0.1 mol % of boron oxide (B₂O₃) was added, the boron concentrationin the GaN single crystal 27 was about 3×10¹⁸ cm⁻³. Therefore, it can beseen that about 10¹⁷ cm⁻³ to 3×10¹⁸ cm⁻³ of boron can be doped in theGaN single crystal 27 by adding 0.01 mol % to 0.22 mol % of boron oxide(B₂O₃) to grow the crystal.

Further, about 6×10¹⁵ cm⁻³ of boron was detected even in the GaN singlecrystal 27 that was grown without adding boron oxide. Since the materialof the reaction vessel 12 is boron nitride (BN), this is thought to bedue to the incorporation of boron (B) that had eluted from the reactionvessel 12 into the GaN single crystal 27 during crystal growth.

Thus, it can be seen that when the added amount of the boron oxide(B₂O₃) is less than 0.01 mol %, boron can be doped in the GaN singlecrystal 27 to a level less than about 10¹⁷ cm⁻³. In addition, based onthe relationship shown in FIG. 6 between the added amount of boron oxide(B₂O₃) and the boron concentration in the GaN single crystal 27, forexample, it can be estimated that when about 0.001 mol % of boron oxide(B₂O₃) is added, which is one order less than 0.01 mol %, about 10¹⁶cm⁻³ of boron can be doped in the GaN single crystal 27.

( 3 ) Electrical Conductivity

The electrical conductivity of the GaN single crystals 27 (27 a to 27 e)was measured. Based on the results, it can be seen that the GaN singlecrystals 27 exhibit n-type electrical conductivity. Further, it can beseen that as the added amount of the boron oxide (B₂O₃) is increased,the electrical conductivity increases and resistance decreases. This isthought to be due to the oxygen doped in the GaN single crystals 27acting as a donor.

This example shows a clear trend for the resistance of the GaN singlecrystal 27 to decrease as the added amount of boron oxide (B₂O₃) isincreased until an added amount of 0.01 mol %. On the other hand, whenthe added amount of boron oxide (B₂O₃) exceeds 0.01 mol %, the trend(rate of change) for the resistance to decrease lessens. Morespecifically, although the resistance of the GaN single crystal 27obtained by adding 0.22mol % of boron oxide (B₂O₃) is slightly less thanthe resistance of the GaN single crystal 27 obtained by adding 0.01 mol% of boron oxide (B₂O₃), this amount of decrease is small enough for theresistances to be called roughly the same.

Thus, in this example, based on a simple process, a high quality, lowresistance n-type group III nitride single crystal could be produced.

According to the present invention, oxygen can be easily doped into acrystal by putting boron oxide having a lower melting point than thecrystal growth temperature of a group III nitride (for example, galliumnitride) into a reaction vessel. Therefore, the present inventionprovides the advantageous effects that, by a simple process, oxygen canbe efficiently doped into a crystal, and an n-type group III nitridesingle crystal that has a high carrier concentration and a lowresistance can be produced.

Although the invention has been described with respect to specificembodiments for a complete and clear disclosure, the appended claims arenot to be thus limited but are to be construed as embodying allmodifications and alternative constructions that may occur to oneskilled in the art that fairly fall within the basic teaching herein setforth.

1-6. (canceled)
 7. An n-type group III nitride single crystal that isdoped with oxygen to a concentration of 10¹⁷ cm⁻³ or more and doped withboron to a concentration of 10¹⁷ cm⁻³ or more.
 8. The n-type group IIInitride single crystal according to claim 7, wherein the oxygenconcentration of the n-type group III nitride single crystal is 10¹⁸cm⁻³ or more.
 9. The n-type group III nitride single crystal accordingto claim 7, wherein the boron concentration of the n-type group IIInitride single crystal is 10¹⁸ cm⁻³ or more.
 10. A crystal substratecomprising an n-type group III nitride single crystal that is doped withoxygen to a concentration of 10¹⁷ cm⁻³ or more and doped with boron to aconcentration of 10¹⁷ cm⁻³ or more.
 11. The crystal substrate accordingto claim 10, wherein the oxygen concentration of the n-type group IIInitride single crystal is 10¹⁸ cm⁻³ or more.
 12. The crystal substrateaccording to claim 10, wherein the boron concentration of the n-typegroup III nitride single crystal is 10¹⁸ cm⁻³ or more.